Nonvolatile Multilevel Resistive Memory Switching In Amorphous La Gd O3 Thin Films

2709 words - 11 pages

Currently there is worldwide interest to develop alternative nonvolatile memory technologies as the commonly used MOS transistor based semiconductor memory devices are rapidly approaching the scaling limits. Among all of the emerging concepts, the metal oxide based resistive random access memory (RRAM) is one of the competitive candidates for future nonvolatile memory applications due to its simple metal-insulator-metal (MIM) structure, high storage density, low power consumption, high operation speed, high endurance, and long retention. , , The memory effect in RRAM is realized through switching of the resistance of the device between the two states (high and low) of resistance.2,3 Based on whether the switching characteristic depends on the voltage polarity, resistive switching is generally classified as unipolar and bipolar switching.3 The unipolar resistive switching is of particular importance as it offers much larger resistance change in simplified circuit architecture. In addition, capability of storing multiple bits in one device has become a significant criterion for RRAMs. , The multi-level resistance switching is expected to enhance the storage density, which means that the memory can store more data in finite space.
Among other metal oxides being explored for RRAM application, amorphous high k-dielectric oxides have gained tremendous attention mainly due to their compatibility to complementary metal-oxide semiconductor (CMOS) technology and the potential for high memory density due to amorphous nature of the film which offers homogeneous structure for efficient down scaling. , , Recently we have demonstrated that amorphous LaGdO3 (LGO), an interlanthanide ABO3 type ternary high-k dielectric oxide material with high linear dielectric constant of ~ 22, large band gap of ~ 5.6 eV, and high crystallization temperature of ~ 1000 °C is a promising material for logic devices. In this paper we report the multilevel unipolar resistive switching observed in amorphous thin films of LGO in Pt/ LGO/ Pt stack geometry which is suitable for RRAM device applications. We have also studied the underlying resistive switching mechanism and associated conduction behavior in the low resistance state (LRS) and high resistance state (HRS) of LGO thin films. Results of these studies are presented in this paper.
About 50 nm thick films of LGO were grown by pulsed laser deposition (PLD) on commercially available Pt/TiO2/SiO2/Si substrates at substrate temperature of ~300 °C and in oxygen ambient at a partial pressure of ~ 10 mTorr. The KrF excimer laser operating at wavelength of 248 nm with 10 Hz repetition rate and at a fluence of ~ 2 J/cm2 was used for the ablation of the ceramic LGO target which was prepared in-house. The structural properties of as-grown LGO layers was studied in-situ by recording reflection high energy electron diffraction (RHEED) patterns and ex-situ by X-ray diffraction measurements which revealed amorphous nature of the film. ...

Find Another Essay On Nonvolatile Multilevel Resistive Memory Switching in Amorphous LaGdO3 Thin Films

Discussion of Devices and Computer’s Components

3567 words - 15 pages needed each time the computer system begins to operate and information supplied such as types of mouse, keyboard, disc drive or the total RAM size. Nazarian (2013) wrote in his company’s white paper that Crossbar has invented a new non-volatile memory which was Crossbar’s non-volatile Resistive Random Access Memory (RRAM); that RRAM technology of Crossbar was rooted on nanoparticles of filamentary while still utilising simple Chip Metal Oxide

The Compact Disk Revolution Essay

3829 words - 15 pages them inappropriate for the transfer of large--or important--files. Removable memory drives have the opposite problem--they, in a sense, are `overkill.' That is, they can hold massive amounts of data, but are large, expensive, and very fragile. Both disks and memory drives must be formatted to a specific computer manufacturer's specifications: a 3.5in floppy disk, formatted to IBM standards, is unreadable to an Apple machine. The development of

Nanocrystalline Materials

941 words - 4 pages material are made up of crystals, then “nanocrystalline materials” term is what they are called. In this case, nanocrystalline materials have grains which are the size of < 100 nm typically. An example of nanocrystalline material of SnO2 is imaged with STM as seen in Fig. 1 [1] and SEM image of nanocrystalline diamond thin films as seen in Fig. 2. [2] Fig. 1. STM image of nanocrystalline SnO2 [1] Fig. 2. SEM image of nanocrystalline diamond thin

The tribological behaviour of water dispersion of diamond nanoparticles between sintered tungsten carbide ball and stainless steel plate

1317 words - 6 pages , Hoffman A. Hydrogen bonding, content and thermal stability in nano-diamond films. Diam Relat Mater 2006;15:486–97. [22] Ferrari AC, Robertson J. Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond. R Soc 2004:2477–512. [23] Prawer S, Nemanich RJ. Raman spectroscopy of diamond and doped diamond. Philos Trans A Math Phys Eng Sci 2004;362:2537–65. [24] Lei X, Shen B, Chen S, Wang L, Sun F. Tribological behavior between micro- and nano-crystalline diamond films under dry sliding and water lubrication. Tribol Int 2014;69:118–27.

A Long Time Ago in a Film Format Far, Far Away

1166 words - 5 pages photos, but only recently when many theaters and companies are switching to digital do the company stop the production of 35mm film stock. Eastman Kodak Company, known nationally for its fine product for photographic films and imaging solution, filed bankrupt only last year. During 2012, Kodak ceased production on digital cameras and sold many of their patents of their photographic film products in order to emerge from bankruptcy. Digital films

Proposal of a Mobile Robotic System (Mechatronic System)

1450 words - 6 pages allows the program memory to be reprogrammed in-system or by a conventional nonvolatile memory programmer. By combining a versatile 8-bit CPU with Flash on a monolithic chip, the Atmel AT89C51 is a powerful microcomputer which provides a highly-flexible and cost-effective solution to many embedded control applications. MOBILE PHONE: Every Mobile has the option to interface with a PC or micro-controller through a Data cable. Data can be

Conduction Mechanism of Polymer Electrolyte

1567 words - 7 pages DC Conductivity Study Figure 1 shows the typical impedance plot (imaginary part,Zi against real part, Zr of complex impedance, Z*) of CMC/CS doped with different NH4Br content at 303K. This impedance analysis is important in conductivity study and becomes a powerful tool in the investigation of ionically conduction behaviour in solid biopolymer electrolyte films. From the plot, it contains two-well defined regions, namely a high frequency region

Aluminum Nitride on Titanium

650 words - 3 pages film texture of the polycrystalline Ti and AlN films is improved by removing the native oxide from the silicon substrate in-situ and sequentially depositing the films under vacuum to provide a uniform growth surface. The piezoelectric properties for several AlN film thicknesses are measured using laser doppler vibrometry on unpatterned wafers and released cantilever beams. The film structure and properties are shown to vary with thickness, with

Semiconductors

1958 words - 8 pages electrical properties of high-purity single crystals than those of impure, polycrystalline material. Once this has been obtained, a slice or wafer of the semiconductor is taken. This wafer is the starting point for device fabrication. It is lapped and polished and then etched to remove any damage to the surface. Devices can be produced directly on this wafer, although modern devices are usually developed in thin epitaxial films of semiconductor

energy

6173 words - 25 pages dioxide thin films have been recently developed and are interesting because the material is transparent and can be used for windows [7]. Tin Oxide Tin oxide is a conductive material that is transparent when in a thin layer. Tin oxide is used in place of a metallic grid for the top layer of thin film photovoltaic sheets [8]. Amorphous Silicon (a-Si) Amorphous (uncrystallized) silicon is the most popular thin-film technology. It is prone to degradation

Role of acidic media in architecting of ammonia gas sensing behavior of polypyrrole nanostructures

2106 words - 8 pages presence of dipole moment perpendicular to the plane of aromatic ring of PPy chains. Works Cited [1]. A. Joshi, S.A. Gangal, S.K. Gupta, Ammonia sensing properties of polypyrrole thin films at room temperature, Sens. Actuators B 156 (2011) 938– 942. [2]. M.F. Mabrook, C. Pearson, M.C. Petty, Inkjet-printed polypyrrole thin films for vapour sensing, Sens. Actuators B 115 (2006) 547–551. [3]. R.A. Bissell, K.C. Persaud, P. Travers, The influence

Similar Essays

Nve Corporation Analysis

903 words - 4 pages NVE Corporation was founded in 1989 in Eden Prairie, Minnesota. Originally called Nonvolatile Electronics, the company changed its name to NVE Corporation after going public on the Nasdaq stock exchange in 2000; their ticker symbol is NVEC. The word “nonvolatile” refers to memory that retains information after a power source has been removed. Since their founding, NVEC has been granted over $50 million in government research contracts

Problems With Common Medical Implants Essay

1763 words - 8 pages coefficient of friction [10]. DLC thin films have comparable wear resistances, biocompatibilities and coefficients of friction with respect to TiN [2]. DLC is a chemically inert material with a high corrosion resistance and biocompatibility. In vivo tests show good performance of DLC thin films — even with stainless steel bulk materials no inflammation or corrosion was observed (CITATION NEEDED). Due to their amorphous structure DLC thin films and

Conversion Efficiency Of Active Energy And Solar Energy

826 words - 3 pages with a laser. Thin film cells offer the potential for cost reductions. Firstly, material costs are lower because much less semiconductor material is required and, secondly, labor costs are reduced because the films are produced as large, complete modules and not as individual cells that have to be mounted in frames and wired together. The most fully developed thin film technology is hydrogenated amorphous silicon. This is the material normally

Phase Change Memory Essay

684 words - 3 pages great role. Study of these materials properties and tailoring them for optimization is the foundation stone for a technology. As the PCRAM speed is depends on the switching speed between phases (amorphous to crystalline) .The details study of phase/crystallization kinetics will helps us to tune the speed in PCRAM. We (I and Prof.Robert Edward Simpson) recently design a static optical taster to study the crystallization kinetics( phase speed, supper lattice structure for material optimization)